摘要
本文用DLTS谱仪和单脉冲瞬态电容技术测量了光通信用GaAlAs/GaAs双异质结发光管中的深能级,对有源区掺Si和掺Ge的相同结构器件,均测得有多子陷阱存在,其能级位置分别为E_C—E_D≈0.29eV和E_T—E_V≈0.42eV。比较了外延系统中氧含量变化对有源区掺Si器件深能级的影响,以及有源区EL图象中的DSD与深能级关系,结果表明外延系统中氧含量对深能级有明显影响,而EL图象中DSD的出现率与深能级无明显关系。
Deep levels in Ga1-xAlxAs/GaAs double-heterojunction LEDs have been studied by DLTS. The Ga1-x Alx As DH material was grown by LPE technique. The dark deitcts are ob-jerved with an infrared line scanner. The effect of the oxygen contamination on the deep levels in Si-doped active layer is found. The activation energy Ec-ED≈0.29 eV. The DSD are sometimes generated in the emitting area. It did not related to the deep levels obviously.
