摘要
通过热力学分析从理论计算上给出了C－H－N体系中低压生长金刚石的三元相图．该相图中存在金刚石生长区．不同温度和压强下金刚石生长区几乎都位于CH4－N连线以下，并且随衬底温度的改变而有显著的变化．随着氮含量的增加，金刚石生长区向碳含量减少的方向移动．使用该相图对优化添加含氮气源生长金刚石的实验条件提供了理论依据．
The ternary C-H-N phase diagrams for low pressure diamond growth were theoretically calculated through thermodynamic analysis. Thcre are diamond growth regions in these phase diagrams. Almost all the diamond growth regions in triangle phase diagrams located below the CH4-N line in the low carbon concentration region, and its shape and position change greatly with substrate temperature. The diamond growth regions allow us to optimize the experimental conditions of low pressure CVD diamond growth with nitrogen addition.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第6期840-846,共7页
Journal of Inorganic Materials
基金
国家自然科学基金!59082001
863高科技基金
