摘要
本文综述了在化学气相沉积（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ ，ＣＶＤ） 金刚石薄膜过程中非金刚石衬底表面金刚石成核机理研究进展。主要讨论了衬底表面缺陷诱导金刚石成核模型，指出最大原子团的存在决定了金刚石成核是否能够在衬底表面发生；分析了金刚石在非金刚石衬底成核时的过渡层问题，提出了过渡层存在机理；对于在等离子体ＣＶＤ 中的偏压增强金刚石成核效应，提出的负偏压离子流增强成核模型和正偏压电子流增强成核模型，较好地解释了相关的实验现象：在表面反应机理基础上发展的金刚石成核动力学模型发现，在金刚石成核早期，较大的碳浓度可以极大地提高金刚石成核密度这一重要的金刚石成核现象。
The progress of the nucleation mechanisms of diamond on non diamond substrates upon chemical vapor deposition(CVD)has been reviewed in this paper.First,from the model of surface defect induced diamond nucleation,it can be seen that the maximum atomic number of the atomic cluster,which could develop to the critical nucleation,greatly influences the behavior of diamond nucleation upon vapor deposition.Secondly,by the structural analysis of the intermediate layers between diamond films and non diamond substrates,a formation mechanism of the intermediatelayers was suggested.Thirdly,based on the effect of by means of bias voltage enhanced diamond nucleation upon plasma CVD,two models,i.e.ion current model for the negative bias and electron current model for positive bias,give the reasonable explanation for the relevant experiment.Finally,a nucleation kinetic model was developed based on the surface reaction mechanism of diamond growth,and it revealed that the high carbon concentration could greatly promote diamond nucleation in the initial stage of diamond growth,which is the important nucleation behavior upon vapor deposited diamond films.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1999年第4期407-415,共9页
Journal of Synthetic Crystals
