摘要
提出了近年来实验发现的在等离子体化学气相沉积（ＰＣＶＤ）金刚石薄膜中衬底负偏压增强成核效应的理论模型，给出了偏压增强成核效应与沉积参数诸如反应压强和碳源浓度等的关系，解释了在负偏压增大时，反应压强和碳源浓度的变化对成核增强强度的影响，并且讨论了阈值负偏压问题。本模型得到的理论结果与文献中的实验结果基本一致。
The mechanism of substrates negative bias enhanced nucleation of diamond, in the growth of diamond thin films by plasma CVD methods is suggested, A relationship between the effect of bias enhanced nucleation and deposition condition such as the reaction pressures and carbon fractions are obtained from the model. The model reasonally explains why the bias enhanced nucleation of diamond increase with the decrease of reaction pressures and the increase of carbon fraction, as the bias is enhanced .The model is also in accordance with the reported data.
出处
《高压物理学报》
CAS
CSCD
北大核心
1996年第2期114-121,共8页
Chinese Journal of High Pressure Physics
基金
湖南省自然科学基金
