摘要
利用深能级瞬态谱（ Ｄ Ｌ Ｔ Ｓ）和瞬态光电阻率谱（ Ｔ Ｐ Ｒ Ｓ）研究了利用金属有机物化学气相沉淀（ Ｍ Ｏ Ｃ Ｖ Ｄ）方法生长的未有意掺杂的 Ｉｎ１－ ｘ Ｇａｘ Ｐ中缺陷对载流子的俘获和发射过程。利用 Ｄ Ｌ Ｔ Ｓ测量观测到了一个激活能为０３５ ｅ Ｖ 的缺陷，由 Ｔ Ｐ Ｒ Ｓ测量确定该缺陷的俘获势垒值介于１８０ ｍ ｅ Ｖ 到２４０ｍ ｅ Ｖ 之间。该缺陷的俘获势垒值的大的分布解释为缺陷周围原子重组的微观波动。同时在 Ｔ Ｐ Ｒ Ｓ测量中观测到俘获势垒为００６ ｅ Ｖ 和０４０ ｅ Ｖ 的两个缺陷。
We have investigated the emission and capture process of native defects in undoped In 1- x Ga x P grown by MOCVD using DLTS technique and transient photo resistivity spectroscopy (TPRS) technique.A common defect with activation energy of about 0.35 eV was observed with DLTS technique.The capture barriers of the defect distributed over 60 meV from 180 meV to 240 meV with TPRS measurements.The distribution can be interpreted as the microscopic fluctuation of atomic arrangements around the defect.Two defects with capture barrier energy 0.06 eV and 0.40 eV,which can not be detected with DLTS technique,were also observed with TPRS measurements.
出处
《光电子．激光》
EI
CAS
CSCD
1999年第4期344-346,共3页
Journal of Optoelectronics·Laser
基金
国家重点实验室资助项目
关键词
本征缺陷
深能级瞬态谱
TPRS
俘获势垒
MOCVD
native defects
deep level transient spectroscopy (DLTS)
transient photo resistivity spectroscopy (TPRS)
capture barrier
