摘要
采用红外透射测量观测了氢钝化对Hg_(1-x)Cd_xTe晶片的影响,用分层模型计算了晶片透射率,分析了氢钝化增加其透射率、吸收边向短波方向移动、低于禁带宽度能量的吸收降低、透过范围减小的原因。表明氢钝化不仅影响到表面,而且影响到整个体内。原因是经氢钝化处理后杂质或缺陷受到有效钝化,载流子浓度降低,组分x增加;荷电杂质或缺陷的局域内场影响发失变化;以及荷电杂质或缺陷散射增强。
Infrared transmission measurements were made to investigate the influence of hydrogen passivation on Hg_(1-x)Cd_xTe wafers. It was observed that, after boiling the samples in water, the infrared transmittance increased, the absorption edge was moved to the short wave direction and the absorption below the energy gap was reduced, and that the range of infrared transmission was narrowed. Through calculating the trans-mittance of Hg_(1-x)Cd_xTe with the multiple layer model, it was found that hydrogen passivation influences not only the surface but the whole bulk of Hg_(1-x)Cd_xTe wafer. Careful analyses showed that, the changes of Hg_(1-x)Cd_xTe infrared transmission spectrum after hydrogen passivation are the results of the effective passivation of residual impurities or defects, the reduction of carrier concentration, the increase of composition x, the effect of local internal electric field of charged impurities or defects, and the enhancement of scattering of charged impurities or defects.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第5期371-378,共8页
Journal of Infrared and Millimeter Waves
基金
中国科学院八五重大应用基础项目基金~~
关键词
氢
钝化
红外材料
透射率
碲镉汞
HgCdTe, hydrogen passivation, infrared transmission.
