摘要
我们利用深能级瞬态谱（ＤＬＴＳ）研究了一系列ＩｎＡｓ自组织生长的量子点超晶格样品，确认样品中存在体ＧａＡｓ缺陷能级ＥＬ２和ＩｎＡｓ量子点电子基态能级．测得１．７和２．５原子层ＩｎＡｓ量子点电子基态能级相对于ＧａＡｓ的导带底分别为１００ｍｅＶ和２１０ｍｅＶ，量子点电子基态的俘获势垒分别为０．４８ｅＶ和０．３０ｅＶ．
Abstract Deep Level Transient Spectroscopy (DLTS) has been successfully applied to characterize the electronic property of self organized grown InAs quantum dots. The energies of ground state of 2 5ML and 1 7ML InAs quantum dots with respect to the conduction band of bulk GaAs are about 0 21 eV and 0 10 eV, respectively, and the capture barrier energies of these dots for electron are about 0 30eV and 0 48eV, respectively.
基金
国家攀登计划
国家自然科学基金
