摘要
利用深能级瞬态谱（ＤＬＴＳ）和瞬态光电阻率谱（ＴＰＲＳ）研究了利用金属有机物化学汽相沉淀（ＭＯＣＶＤ）生长的未有意掺杂的Ｉｎ０．４９Ｇａ０．５１Ｐ中缺陷对载流子的俘获过程和发射过程．利用ＤＬＴＳ测量观测到了一个激活能为０．３７ｅＶ的缺陷，该缺陷的俘获势垒值介于１８０ｍｅＶ到２４０ｍｅＶ之间．该缺陷的俘获势垒值的大的分布被解释为缺陷周围原子重组的微观波动．在研究中发现研究这些缺陷的俘获过程比发射过程更有效，俘获势垒为０．０６ｅＶ和０．４０ｅＶ的两个缺陷在俘获过程中被观测到。
We have investigated the emission and capture process of native defects in undoped In 0.49 Ga 0.51 P grown by MOCVD using DLTS technique and transient photo resistivity spectroscopy (TPRS) technique. A common defect with an activation energy of about 0 37eV was observed with DLTS technique. It's found that the capture barriers of the defect distributed over 60meV from 180meV to 240meV by TPRS measurements. The distribution can be interpreted as the microscopic fluctuation of atomic arrangements around the defect. The investigation of capture process seems more powerful then emission process in these materials, because of two defects with capture barrier energy 0.06 and 0.40eV, that can not be detected with DLTS technique, were also observed with TPRS measurements.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1999年第1期17-21,共5页
Chinese Journal of Luminescence
关键词
深能级瞬态谱
俘获势垒
铟镓磷
半导体
缺陷
deep level transient spectroscopy (DLTS), transient photo resistivity spectroscopy (TPRS), capture barriers
