摘要
利用深能级瞬态谱(DLTS)技术,并通过电子辐照、等时热退火等物理过程,鉴别了Si中与钼有关能级的本质.钼在Si中产生两个主要能级E(0.53)和H(0.36),前者为受主态,后者为施主态,这两个能级都与替位Mo原子有关.
We have identified the energy levels related to Mo in silicon by using DLTS technique.With the methods of electron irradiation and isochronous annealing, we have obtained the twomain energy levels of E(0.53) and H(0.36). The former is an acceptor and the latter is z do-nor.These levels are related to substitutional Mo atoms.
关键词
硅
钼
能级
能级瞬态谱
电子辐照
Crystals
Atomic Structure
Semiconducting Silicon Compounds
Performance
