摘要
阐述了一种新的异质结双极型晶体管(HBT)的小信号模型参数提取方法——综合多偏置点优化参数提取法.对HBT小信号模型进行推导并确定外部参数和内部参数的计算公式;介绍了多偏置点优化算法,并在GaInP/GaAsHBT器件上进行了鲁棒性和精确性测试.实验采用了一系列随机初始值,结果表明提取的参数值具有唯一收敛性和精确性,仿真结果与测量数据的相对误差小于1%.
This paper presents a multibias optimizing parameter extraction technique for Heterojunction Bipolar Transistor（HBT）small-signal model.The corresponding equations for intrinsic and extrinsic elements have been established in according with small-signal HBT model through formula derivation.A multibias decomposition-based optimization method is discussed.Robustness and accuracy of optimization method are tested on measured S-parameters of GaInP/GaAs HBT device.Results show that the extracted parameters have the characteristics of exclusive astringency and accuracy with a different set of random starting values,and the relative error between the simulated results and the values measured is less than 1%.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2010年第3期567-571,共5页
Acta Electronica Sinica
基金
国家自然科学基金(No.60601022)
浙江省自然科学基金(No.Y1080589)
关键词
异质结双极型晶体管
参数提取
小信号等效模型
heterojunction bipolar transistor（HBT）
parameter extraction
small-signal equivalent model
