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InGaP/GaAs微波HBT器件与电路研究及应用进展 被引量：2

Progress of Research and Application of InGaP/GaAs HBT Microwave Device and IC Technology
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摘要 概述了近年来微波InGaP/GaAs异质结双极晶管(HBT)器件和集成电路的研究和应用现状,着重阐述了HBT器件的热设计、降低偏移电压、离子注入隔离、湿法腐蚀,以及用于电路设计的等效电路模型等关键问题。 Recent progress in the research of InGaP/GaAs HBT device and integrated circuit technology for microwave application are reviewed in this paper. Some key points with emphasis on device heating, lower offset voltage,isolation,wet etching,and equivalent circuit models used in HBT circuit design are discussed.
作者 林玲 徐安怀 孙晓玮 齐鸣
机构地区 中国科学院上海微系统与信息技术研究所
出处 《材料导报》 EI CAS CSCD 北大核心 2006年第12期5-7,共3页 Materials Reports
基金 国家重点基础研究发展规划资助项目(批准号:2002CB311902)
关键词 异质结双极晶体管 INGAP/GAAS 微波单片集成电路 heterojunction bipolar transistor, InGaP/GaAs, MMIC
分类号 TN385 [电子电信—物理电子学]
  • 相关文献

参考文献20

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共引文献10

同被引文献19

  • 1孙玲玲,刘军.微波HBT建模技术研究综述[J].电子学报,2005,33(2):336-340. 被引量：9
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材料导报
2006年 第12期

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