摘要
提出了一种应变Si/SiGe异质结CMOS结构,采用张应变Si作n-MOSFET沟道,压应变SiGe作p-MOSFET沟道,n-MOSFET与p-MOSFET采用垂直层叠结构,二者共用一个多晶SiGe栅电极。分析了该结构的电学特性与器件的几何结构参数和材料物理参数的关系,而且还给出了这种器件结构作为反相器的一个应用,模拟了其传输特性。结果表明所设计的垂直层叠共栅结构应变Si/SiGe HCMOS结构合理、器件性能提高。
A strained Si/SiGe HCMOS structure was presented, in which tensile strained Si was used in n-MOSFET, and compressive strained SiGe was used in p-MOSFET, moreover, n-MOSFET and p-MOSFET were stacked vertically with a common SiGe gate in this structure. The relationship between electronic properties and geometric and material parameters was analyzed. The application of the device structure as an inverter was given, and its transportation character was simulated. The simulation results indicate that this structure of strained Si/SiGe HCMOS with vertical stack and a common gate is appropriate, and the performance is improved.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第5期397-401,共5页
Semiconductor Technology
基金
国家重点预研基金资助项目(51408061104DZ01)
