摘要
在无催化剂和模板条件,利用直流电弧放电等离子方法直接氮化金属铝合成纤锌矿结构的单晶AlN纳米线.分别用X光射线衍射(XRD)和场发射扫描电镜(FESEM)对AlN纳米线的结构和形貌进行表征,并测量了AlN纳米线的光致发光谱(PL).结果表明,AlN纳米线的长度超过100μm,直径大约200 nm,具有较高的长径比;在AlN纳米线的PL谱中,中心在506nm的发射带源于氮空位相关的深能级缺陷.
Using the direct current arc discharge plasma method, single-crystal wurtzite AIN nanowires are synthesised by direct nitriding metal AI without catalyst and templet. The strueture and morphology of the AIN nanowires are characterized by XRD and FESEM. The results reveal that the AIN nanowires have an diameter of about 200 nm and lengths of up to 100μm. The photoluminescence of the AIN nanowires suggests that the emission band at 506 nm may be ascribed to the deep level defect due to nitrogen vacancy.
出处
《沈阳理工大学学报》
CAS
2009年第4期92-94,共3页
Journal of Shenyang Ligong University
基金
国家自然科学基金资助项目(50772043)
