摘要
报道了一种通过直接氮化Al粉合成氮化铝(AlN)纳米线的方法。该方法无需任何催化剂,并且可以获得大面积的单一形貌的AlN纳米线。所制备的AlN纳米线的平均长度超过20μm,直径为30～125nm,是沿着[001]方向生长的单晶六方纤锌矿结构。场发射特性测试结果表明,AlN超长纳米线的开启电场为6.3V/μm,阈值电场为12.2V/μm,最大电流密度达1440μA/cm2。这暗示着AlN超长纳米线是一种很有潜力的冷阴极纳米材料。
This paper reports a catalyst-free method to prepare ultra-long aluminum nitride nanowires in large-area by direct nitridation of Al powder.The as-prepared AlN nanowires have a mean length of over 20 μm and a diameter ranging between 30 nm and 125 nm.The AlN nanowires are all single crystalline hexagonal wurtzite structures and grow along [001] direction.Field emission measurements show that the turn-on field and threshold field of AlN ultra-long nanowires is respectively 6.3 V/μm and 12.2 V/μm,and their maximum current density can reach 1 440 μA/cm2,which suggests it is a kind of promising cold cathode material candidate in field emission display（FED）.
出处
《液晶与显示》
CAS
CSCD
北大核心
2010年第4期546-550,共5页
Chinese Journal of Liquid Crystals and Displays
基金
国家自然基金委-广东省联合基金(No.U0634002
No.U0734003)
国家自然科学基金(No.50802117)
教育部博士点基金(No.20070558063)
中山大学青年教师培育基金(No.09lgpy28)
关键词
AlN超长纳米线
无催化剂
场发射
AlN ultra-long nanowires
catalyst-free
field emission
