摘要
本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。
Nano zinc oxide were grown on n- Si （111） substrate by directly evaporating high pure zinc powder without employing catalyst at 800℃ in oxygen. The nano zinc - oxide were mainly tetrapod. The angles of the symbiotic T - ZnO nanowires were about 110°, the length was 1.5μm and the diameter was 100nm. Raman spectra analysis showed E2（H） existed in different kinds of zinc oxide; photoluminescence spectroscopy （PL） study was also employed, which indicated PL of zinc oxide related to both material property and defects of impurity, blue and green emission bands were originated from defects in ZnO.
出处
《光散射学报》
2006年第3期271-276,共6页
The Journal of Light Scattering
基金
四川省科技厅应用基础研究项目(No.01GY051-21)
关键词
纳米氧化锌
四角状
拉曼光谱
荧光光谱
缺陷
Nano znic Oxide
Tetrapod
Raman spectra
photoluminescence spectroscopy
defect
