摘要
采用直流电弧放电法,以Al和Sm_(2)O_(3)的混合粉体与氮气直接反应,成功制备出Sm^(2+)掺杂AlN纳米线。通过X射线衍射(XRD)、拉曼光谱(Raman)、X射线光电子能谱(XPS)、能量色散光谱仪(EDS)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)对纳米线的组成和形貌进行了分析。结果显示,纳米线的直径为50~200 nm,Sm^(2+)离子以二价形式成功掺入AlN晶格而不改变AlN晶格结构。Sm^(2+)掺杂AlN纳米线表现出与Sm^(2+)离子4f能级的跃迁相对应的发射峰和室温铁磁性,表明其在光电子和自旋电子微/纳米器件领域具有潜在的应用价值。
The Sm^(2+)doped AlN nanowires were successfully prepared by the direct reaction of Al and Sm_(2)O_(3) mixed powders with nitrogen using the direct current arc discharge method.The composition and morphology of nanowires were analyzed by X-ray diffraction(XRD),Raman spectroscopy(Raman),X-ray photoelectron spectroscopy(XPS),energy dispersive spectroscopy(EDS),scanning electron microscopy(SEM)and transmission electron microscopy(TEM).The results show that the diameter of the nanowires is approximately 50-200 nm,and Sm^(2+)ions are successfully incorporated into the AlN lattice without altering the AlN lattice structure.Sm^(2+)doped AlN nanowire exhibits distinct emission peaks corresponding to 4f electron transitions of Sm^(2+)ions and room temperature ferromagnetism,indicating Sm^(2+)doped AlN nanowires have potential applications in optoelectronic and spintronic micro/nano devices.
作者
杨莉
张玲
王秋实
YANG Li;ZHANG Ling;WANG Qiushi(College of Physical Science and Technology,Bohai University,Jinzhou 121013,Liaoning Province,China;Liaoning Geology Engineering Vocational College,Dandong 118000,Liaoning Province,China)
出处
《电子元件与材料》
CAS
北大核心
2023年第11期1302-1307,共6页
Electronic Components And Materials
基金
辽宁省教育厅科学研究项目(LJ2020009)。
关键词
氮化铝
掺杂
光致发光
室温铁磁性
直流电弧
AlN
doping
photoluminescence
room temperature ferromagnetism
DC arc discharge
