摘要
用射频磁控溅射法在石英玻璃衬底上制备了较高结晶质量的ZnO：Mn薄膜，继而进行N离子注入和退火处理，成功实现了ZnO薄膜的Mn—N两步法共掺杂和P型转变。利用X射线衍射（XRD）、Hall测试、分光光度计、X射线光电子能谱（XPS）等测试手段对其性能进行了分析。结果表明：所测样品均具有单一的c轴择优取向，薄膜在退火后没有检测到其它杂质相的生成；薄膜在650℃经10～30min退火时均可实现P型转变，空穴浓度可达10^16-10^17cm^-3，表明650℃可能为ZnO：Mn—N体系中N离子达到电激活成为有效受主的温度；XPS能谱证明了Mn^2＋、N^3-离子的掺入；在热退火作用下，部分间隙位N离子达到电激活通过扩散进入O空位，形成N-Zn或N-Mn键，是样品转变为P型的依据；P型ZnO：Mn—N薄膜室温下的禁带宽度为3．16eV，相对未掺杂ZnO的禁带宽度3．29eV明显减小。
p-Type conductive Mn-N codoped ZnO thin films have been fabricated on quartz glass substrates by radio-frequency magne- tron sputtering technique together with the direct implantation of N ions and post-annealing at appropriate condition. The effects of thermal annealing on the structure and electrical properties of the codoped ZnO films are investigated by X-ray diffraction, Hall measurements system, transmission spectrum and X-ray photoelectron spectroscopy. The experimental results suggest that all the films have caxis preferred orientation, even when annealing later, no manganese oxide or nitride phase are detected. The codoped ZnO films annealed at 650 ℃from 10 to 30 minutes show good p-type conductivity with the hole concentration of 10^16-10^17 cm^-3, indicating that more N acceptors can be activated at the temperature of 650 ℃. X ray photoelectron spectroscopy and studies reveal the incorporation of both divalent Mn^2＋ and trivalent N^3- ions into the codoped ZnO films. Owing to electrical activation, a lot of N on substitutional sites can distribute into O site , come into being N-Mn or N-Zn bonds as the activated acceptor which would induce low resistivity p-type conduction. It is also found that the band gap of p-type codoped ZnO films is about 3.16 eV, and is slightly lower than that of undoped ZnO film（3.29 eV）.
出处
《重庆师范大学学报（自然科学版）》
CAS
2009年第3期82-85,共4页
Journal of Chongqing Normal University:Natural Science
基金
重庆市自然科学基金(No.AC4034)
关键词
射频测控溅射
离子注入
Mn—N共掺
退火
电激活
P型ZNO
radio frequency magnetron sputtering
Mn-N codoped
ion-implant
anneal
electrical activation
p-type ZnO films
