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Ag掺杂p型ZnO薄膜及其光电性能研究 被引量:7

Ag doped p-type ZnO films and its optical and electrical properties
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摘要 采用超声喷雾热分解法在石英衬底上以醋酸锌水溶液为前驱体,以硝酸银水溶液为Ag掺杂源生长了Ag掺杂ZnO(ZnO:Ag)薄膜.研究了衬底温度对所得ZnO:Ag薄膜的晶体结构、电学和光学性质的影响规律.所得ZnO:Ag薄膜结构良好,在室温光致发光谱中检测到很强的近带边紫外发光峰,透射光谱中观测到非常陡峭的紫外吸收截止边和较高的可见光区透过率,表明薄膜具有较高的晶体质量与较好的光学特性.霍尔效应测试表明,在500℃下获得了p型导电的ZnO:Ag薄膜,载流子浓度为5.30×1015cm-3,迁移率为6.61cm2·V-1s-1. Ag doped ZnO films(ZnO:Ag) were deposited on quartz glass substrates by ultrasonic spray pyrolysis technology.Zn(CH_3COO)_2 and Ag(NO_3)_3 aqueous solution were used as the sources of Zn and Ag,respectively.The effect of substrate temperature on structural,electrical and optical properties of ZnO:Ag films were studied using X-ray diffraction,Hall effect measurement,photoluminescence spectra,and transmittance spectra measurement.All the measurements were performed at room temperature.It is found that the electrical and optical properties of the obtained ZnO:Ag thin films change dramatically due to Ag doping.The Ag doped p-type ZnO films with hole carrier concentration of 5.295×1015?cm-3 and Hall mobility of 6.61?cm2·V-1s-1 at room temperature have been successfully obtained at optimal conditions.In photoluminescence measurements,a strong ultraviolet emission centered at 379?nm and a relatively weak green emission band were observed,and in transmittance measurements,a high transmittance of ~70% in the visible region and a sharp absorption edge at 375?nm were observed for all samples.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2008年第8期5212-5216,共5页 Acta Physica Sinica
基金 国家自然科学基金(批准号:50532080,60576054) 高等学校博士学科点专项科研基金(批准号:20070141017) 辽宁省自然科学基金(批准号:20072178)资助的课题~~
关键词 ZnO:Ag薄膜 P型掺杂 超声喷雾热分解 霍尔效应 ZnO:Ag films,p-type doping,ultrasonic spray pyrolysis,Hall effect
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参考文献14

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二级参考文献45

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