摘要
在石英玻璃衬底上以ZnO∶In2O3粉末为靶材,采用射频磁控溅射法制备出具有良好c轴择优取向的ZnO∶In薄膜,继而对样品进行二次N离子注入掺杂,成功实现N-In共掺p型ZnO薄膜。借助XRD、Hall测试、XPS和透射谱测试手段研究分析了共掺ZnO薄膜的晶体结构、电学和光学性质。结果表明制备的薄膜具有较高的结晶质量和较好的电学性能,其空穴浓度、迁移率和电阻率分别达到4.04×1018cm-3、1.35cm2V-1s-1和1.15Ωcm。X光电子能谱(XPS)分析显示在p型ZnO薄膜里存在N-In键和N-Zn键,表明In掺杂可以促进N在ZnO薄膜的固溶,有利于N元素在ZnO薄膜内形成受主能级。另外,制备的ZnO薄膜在可见光范围内有很高的透射率,最高可达90%。其常温下的禁带宽度为3.2eV,相对本征ZnO的禁带宽度略有减小。
The N-In codoped p-type ZnO films with preferential orientation along （002） plane have been fabricated on quartz glass substrates by using radio frequency magnetron sputtering technique of ZnO： In2O3 powder target and then by combining with Nimplantation. In this article, the crystal structure, electrical and optical properties of the ZnO films are investigated by x-ray diffraction （XRD） , Hall measurements system, XPS and transmission spectrum. The experimental results suggest that N-In： ZnO films have good film quality and optimal p-type electrical properties with hole concentration of 4.04×10^18 cm^-3, hall mobility of 1.35 cm^2V^-1s^-1, and low resistivity of about 1.15 Ωcm. X-ray photoelectron spectroscopy analysis has confirmed the presence of nitrogen and indium in the form of N-Zn bond and N-In bond in the codoped films, and the incorporation of indium has caused the change in the chemical state of nitrogen, which promotes the formation of p-type conduction. In addition, it is also found that codoped ZnO films have high transmission rate, the highest thin film transmittance is discovered up to 90%, whose wavelength is at 387 nm, corresponding to energy of 3.2 eV, compared with undoped ZnO film of Eg it has slightly minished.
出处
《重庆师范大学学报（自然科学版）》
CAS
2009年第2期108-110,124,共4页
Journal of Chongqing Normal University:Natural Science
基金
重庆市自然科学基金(No.AC4034)
关键词
N—In共掺杂
离子注入
P型ZNO
透射谱
N-In eodoped
ion-implantation
p-type ZnO films
transmission spectrum
