摘要
采用射频磁控溅射在Si片上制备ZnO薄膜,通过离子注入对样品进行N掺杂,在不同温度下进行退火并实现了p型转变.用扫描电子显微镜、X射线衍射和Hall测量对薄膜进行了表征,结果表明薄膜具有良好的表面形貌和高度c轴择优取向,退火后p型ZnO薄膜的最高载流子浓度和最低电阻率分别为1.68×1016cm-3和41.5Ω.cm.讨论并分析了退火温度和时间对ZnO薄膜p型转变的影响.
The ZnO films were prepared on Si substrates by RF magnetron sputtering and doped with N by ion-implantation. The samples were then annealed at different temperatures, and showed p-type conduction. The properties were examined by scanning electron microscopy（SEM）, X-ray diffraction （XRD）, and Hall measurement. The results show that the ZnO films have good surface morphology and are highly c-axis oriented. Hall measurement showed that the resistivity and hole concentration were 41.5Ω·cmand 1.68 × 10^16cm^-3, respectively. This paper focuses on the discussion and analysis of the influence of the temperature and time of annealing on the p-type transition of the ZnO films.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第10期5974-5978,共5页
Acta Physica Sinica
基金
重庆市自然科学基金(批准号:AC4034)
重庆市教委项目(批准号:KJ050812)资助的课题~~
关键词
离子注入
P型ZNO薄膜
退火
射频磁控溅射
ion-implantation, p-type ZnO films, annealing, radio frequency magnetron sputtering
