摘要
软X射线投影光刻能够制作出特征线宽小于0．1μm的线条。激光等离子作源的研究是软X射线投影光刻中几项关键技术之一。本文报道了13nm投影光刻用激光等离子体软X射线源。对Sn（Z＝50）靶的激光打靶条件进行初步优化，测定了其在10～20nm波段范围内的辐射相对强度分布。
Feature size of less than 0. 1 can be produced using soft X-ray projection lithography(SXPL).One of the key techniques in SXPI, research is the development of compact laser-produced plasma source. The 13nm laser plasma source for SXPL was reported in this paper. Preliminary optimal laser parameters for Sn(Z= 50)target were obtained and the relative radiation strengthin wave-range of 10-20nm were measured.
出处
《微细加工技术》
EI
1997年第4期8-11,共4页
Microfabrication Technology
