摘要
文章讨论了内场限环结构ＬＤＭＯＳＴ的参数优化和器件耐压问题，采用直接积分的方法推导出内场限环表面掺杂浓度的精确优化公式．同时，对ＬＤＭＯＳＴ的优化结构开展了耐压分析．与国外同类工作比较，此方法简便直观，计算结果与二维数值模拟结果符合得较好．
In this paper, the high voltage behavior of the LDMOST with internal field rings is investigated by using analytical approach, and the parameters of the internal field rings are optimized. Expressions of the breakdown voltage of the optimal device structure are derived. The accuracy of the analytical expressions is verified by comparison with 2 D simulation results.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1997年第9期67-71,共5页
Journal of Xi'an Jiaotong University
基金
国家自然科学基金
关键词
LDMOST
击穿电压
内场限环结构
耐压分析
lateral diffusion MOS transistor internal field ring surface doping concentration breakdown voltage
