摘要
为了缓解AlGaN/GaN high electron mobility transistors(HEMT)器件n型GaN缓冲层高的泄漏电流,本文提出了具有氟离子注入新型Al0.25Ga0.75N/GaN HEMT器件新结构.首先分析得出n型GaN缓冲层没有受主型陷阱时,器件输出特性为欧姆特性,这样就从理论和仿真方面解释了文献生长GaN缓冲层掺杂Fe,Mg等离子的原因.利用器件输出特性分别分析了栅边缘有和没有低掺杂漏极时,氟离子分别注入源区、栅极区域和漏区的情况,得出当氟离子注入源区时,形成的受主型陷阱能有效俘获源极发射的电子而减小GaN缓冲层的泄漏电流,击穿电压达到262V.通过减小GaN缓冲层体泄漏电流,提高器件击穿电压,设计具有一定输出功率新型AlGaN/GaN HEMT提供了科学依据.
In order to alleviate the leakage current of A1GaN/GaN High Electron Mobility Transistors （HEMT） device with the N-type GaN buffer, the new Al0.25Ga0.75N/GaN HEMT with the Fluoride ion implantation is proposed for the first time in this paper. Firstly, the output characteristic has the ohmic characteristic for the A1GaN/GaN HEMT without acceptor-type trap, which explains why Fe and Mg are doped into the GaN buffer layer as reported in the literature in theory and simulation. By using the output characteristics of the Ida-Vds for the AlGaN/GaN HEMTs with and without low density drain, the results are obtained that fluoride ion implantation can capture effectively the electrons emitted from the source to reduce the leakage current of the GaN buffer compared with fluoride ions in the gate and the drain regions. The breakdown voltage goes up to 262 V. The scientific basis is set up for desiging the new AlGaN/GaN HEMT with both the low leakage current and the high breakdown voltage.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第22期402-408,共7页
Acta Physica Sinica
基金
国家自然科学基金青年科学基金(批准号:61106076)
国家自然科学基金重点项目(批准号:61234006)资助的课题~~
