高压RESURFLDMOST的开态电阻与关态电压

The On -Resistance and off-Voltage of High-Voltage RESURF LDMOS Transistors

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摘要降低表面电场（ＲＥＳＵＲＦ）原理可大大提高ＬＤＭＯＳＴ的器件性能。本文详细研究了用ＲＥＳＵＲＦ原理设计的ＬＤＭＯＳＴ的开态电阻与击穿电压的理论分析模型，并根据这一模型对ＲＥＳＵＲＦＬＤＭＯＳＴ的优化设计作了深入的讨论。最后评价了高压ＲＥＳＵＲＦＬＤＭＯＳＴ在保持器件耐压不变时降低其开态电阻的几种方法。 Theoretical models to calculate the on-resistance and break-down voltage of RESURF LDMOST's are examined at large in the paper.Optimization of RESURF LDMOST's based on the model is disaussed in detail.Finally,an evaluation is made on the performances of the improved LDMOST's.

作者熊平卢豫曾

机构地区电子科技大学微电子所

出处《微电子学》 CAS CSCD 1995年第5期23-29,共7页 Microelectronics

关键词 LDMOST 高压器件功率IC 降低表面电场 RESURF LDMOST,High -voltage device ,Power IC

分类号 TN430.2 [电子电信—微电子学与固体电子学]

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微电子学

1995年第5期

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高压RESURFLDMOST的开态电阻与关态电压

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