摘要
采用磁控溅射的方法在P型GaAs衬底上沉积了Ti／Pt／Au金属薄膜，研究了退火工艺参数（温度和时间）对p-GaAs／Ti／Pt／Au欧姆接触性能的影响。结果表明：p-GaAs上制作的Ti／Pt／Au金属系统能在很短的退火时间（60S）内形成很好的欧姆接触。过分延长退火时间，并不能改善系统的欧姆接触性能。退火温度在400-450℃时均可得到较好的欧姆接触。当退火温度为420℃，退火时间为120S时，比接触电阻率达到最低，为1．41×10^-6Ω·cm2。
The Ti/Pt/Au metal films were deposited on p-GaAs substrate by magnetron sputtering method. The influences of annealing parameters （temperature and time） on the ohmic contact property of P-GaAs/Ti/Pt/Au were studied. The results show that excellent ohmic contact of Ti/Pt/Au metal system on p-GaAs can be formed in a very short annealing time （60 s）. The ohmic contact property can not be improved by prolonging the annealing time. Suitable ohmic contacts can all be obtained when the annealing temperatures are 400--450 ℃. The specific contact resistivity with the minimum value of 1141 × 10^-6 Ω .cm2 can be obtained when the sample is annealed at 420 ℃ for 120 s.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2013年第4期24-27,共4页
Electronic Components And Materials
