摘要
常规的ｎ－ＧａＡｓＡｕＧｅＮｉ／Ａｎ欧姆接触存在不少缺陷。本文提出在ＡｕＧｅＮｉ接触层与ＡＵ覆盖层之间加入扩散阻挡层ＷＮ。结果表明，新结构的金属化不仅降低了比接触电阻，而且具有良好的表面形貌；更重要的是，ＷＮ膜的引入有效地阻挡了接触层与Ａｕ覆盖层中各种元素原子之间的相互扩散，提高了接触的可靠性。
ssociated with conventional AuGeNi/Au ohmic contact of n-GaAs.A WN diffusion barrier added between AuGeNi and An overlay is reported in this paper.The results show that the new metallization decreases the specific contact resistance and has a better surface morphology.It is more important that the introduction of WN inhibites effectively the interdifffusion of atoms in contact layer and An overlay and raises the reliability of the contact.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第3期255-259,共5页
Research & Progress of SSE
