摘要
利用激光剥离技术实现直径为50.8mm GaNLED外延膜的大面积完整剥离。激光剥离后的原子力显微镜(AFM)扫描和X射线双晶衍射谱(XRD)表明剥离前后外延膜的质量并未明显改变。并报道了在剥离掉后的蓝宝石(α-Al2O3)衬底上MOCVD外延生长InGaN/GaN多量子阱(MQW′s)LED器件结构,通过光致发光谱(PL)和XRD谱对比分析了在相同条件下剥离掉后衬底与常规衬底上生长的GaNLED外延膜晶体质量。
2 inch thin GaN LED films,grown on sapphire substrates,is separated by laser lift-off. Atom force microscopy and the double crystal X-ray diffraction measurements of C-aN before and after lift-off process have been employed, which demonstrated that the separation and transfer process do not alter the structural quality of the GaN films obviously. InGaN/ GaN multi-quantum-wells （MQW＇s） structure was grown on the spearated sapphire substrate later and compared with that of grown on the conventional substrate in the same condition by PL and XRD spectrum.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2008年第11期1493-1496,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60276029)
国家"863"计划资助项目(2004AA311020和2006AA032409)
福建省科技项目和基金资助项目(2006H0092
A0210006和2005HZ1018)
关键词
GAN
激光剥离
蓝宝石衬底抛光
GaN
laser lift off
polishing technique of sapphire substrate
