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Cu/Mo/Cu电子封装材料中Mo的分层问题 被引量:3

THE DELAMINATION OF MOLYBDENUM IN Cu/Mo/Cu ELECTRONIC MATERIAL
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摘要 在Cu/Mo/Cu(CMC)电子封装材料的生产中发现,通过轧制复合后的CMC在加工完成品后,经常出现Mo层的分层现象。为解决这一生产问题,将Mo坯分别在冷轧态、950℃退火态、1050℃退火态、1150℃退火态进行热轧复合,通过金相观察Mo坯的组织形貌,发现1150℃完全再结晶的Mo坯复合后成品率较其它状态要好一些,但还是不能完全解决问题。随后利用冷轧态的Mo坯,热轧复合温度由850℃提高到950℃,能够达到90%的成品率,可以满足生产要求。 During the production of Cu/Mo/Cu electronic material, such a phenomenon was discovered, which was the Mo layer always laminated after becaming finished product. To solve the problem, four kind of Mo base was selected to hot rolling compound. That was cold rolling, annealed at 950℃ ,annealed at 1 050℃ and annealed at 1 150 ℃. The microstructure of Mo base also was observed in the four conditions. We discovered that when the Mo base annealed at 1 150 ℃, there were full recrystal equiaxed grains. Using such kind of Mo base, the rate of finished products was better then the others, but not the best. After increasing the hot rolling compound temperature from 850 ℃ to 950 ℃ just using the cold rolling Mo base ,we found the rate of finished products can reach to 90%, could satisfy the production.
出处 《中国钼业》 2007年第5期54-56,共3页 China Molybdenum Industry
关键词 电子封装材料 Cu/Mo/Cu 再结晶 热轧温度 electronic material Cu,/Mo/Cu recrystallization hot rolling temperature
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