摘要
用射频磁控溅射法在玻璃衬底上氩气气氛中制备出(Al,Zr)共掺杂的ZnO透明导电薄膜,研究了不同Zr掺杂浓度和薄膜厚度ZnO薄膜的结构、电学和光学特性。结果表明,在最佳沉积条件下我们制备出了具有(002)单一择优取向的多晶六角纤锌矿结构,电阻率为2.2×10-2Ω.cm,且可见光段(320～800nm)平均透过率达到85%的ZnO透明导电薄膜。在150℃的条件下对(Al,Zr)共掺杂的ZnO薄膜进行1h的退火处理,薄膜电阻率降低至8.4×10-3Ω.cm。Zr杂质的掺入改善了薄膜的可见光透光性。
The structural features, optical and electrical properties of Al-Zr codoped ZnO thin films deposited by radio frequency （RF） rnagnetron sputtering onto glass substrates was investigated. The films were polycrystalline fitting well with a hexagonal wurtzite structure and have preferred orientation in [002] direction. 2.2 × 10^-2 Ω·cm of resistivity was prepared at the optimal condition. Zr doping, film thickness and annealing treatment effects on the optical and electrical properties of Al-Zr codoped ZnO thin films were investigated. After an annealing process at 150 ℃ in 1 h, Al-Zr codoped ZnO thin films had a drop in resistivity to 8.4 × 10^-3 Ω·cm. All films we obtained show high visible region average transmittance of 85 %.
出处
《液晶与显示》
CAS
CSCD
北大核心
2007年第5期560-564,共5页
Chinese Journal of Liquid Crystals and Displays
基金
北京市科委科技计划资助项目(No.D0306006000091
No.D0304002000021)
关键词
氧化锌
透明导电薄膜
电阻率
透光率
射频磁控溅射
ZnO
transparent conductive thin film
resistivity
transmittance
RF magnetron sputtering
