摘要
利用直流磁控溅射工艺,在水冷玻璃衬底上制备了透过率高、电阻率相对较低的钛铝共掺杂ZnO(TAZO)透明导电膜。用XRD和SEM等研究其结构、应力和光电性能与靶基距之间的关系。结果表明:TAZO薄膜为六方纤锌矿结构的多晶薄膜,且具有c轴择优取向。当靶基距为42mm时,薄膜样品晶格畸变最小,具有最小压应力(绝对值)0.270GPa,同时具有最小方块电阻4.21?/□;靶基距为48mm时,薄膜样品具有最小电阻率3.09×10–4?·cm。所有薄膜样品的可见光区平均透过率都超过了91%。
Transparent conducting Ti-Al co-doped zinc oxide films （TAZO） with high transmittance and relatively low resistivity were prepared on water-cooled glass substrate by DC magnetron sputtering process. The relation between structure, stress and optoelectrical properties of obtained TAZO films and distance of target-substrate were studied with XRD and SEM. Results show that TAZO films are polycrystalline with a hexagonal wurtzite structure and a preferred orientation perpendicular to the substrates along the c-axis. When the distance of target-substrate is 42 mm, the distortion in the crystal lattice of TAZO films is minimum, and the films possess lowest stress （0.270 GPa） and the lowest sheet resistance （4.21 ？/□）. When the distance of target-substrate is 48 mm, the lowest resistivity （3.09×10–4 ？·cm） is obtained. The average transmittance of all the TAZO thin films is over 91% in the visible light range.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2010年第10期21-24,共4页
Electronic Components And Materials
基金
山东省自然科学基金资助项目(No.ZR2009GL015)
关键词
靶基距
TAZO薄膜
透明导电膜
磁控溅射
distance between target and substrate
Ti-Al co-doped zinc oxide thin film
transparent conducting film
magnetron sputtering
