期刊文献+

Ti-Al共掺ZnO薄膜的应力、结构和光电性能研究 被引量:4

Study on the stress,structural and optic-electrical properties of Ti-Al co-doped ZnO films
原文传递
导出
摘要 利用直流磁控溅射工艺,在水冷玻璃衬底上成功沉积出了高透光、低电阻率的Ti-Al共掺ZnO(TAZO)透明导电薄膜。X射线衍射(XRD)研究结果表明,TAZO薄膜为具有c轴择优取向的六角纤锌矿结构多晶薄膜。研究了TAZO薄膜的应力、结构以及光电性能与薄膜厚度的关系,结果表明,当薄膜厚为531 nm时,薄膜晶格畸变最小,具有最小压应力(绝对值)0.726 6 Gpa,同时具有最小电阻率3.35×10-4Ω.cm,其光学带隙大约为3.58 eV。所制备薄膜附着性能良好,在波长为400~760 nm波段的可见光中平均透过率都超过了91%。 The transparent conducting Ti-Al codoped zinc oxide(TAZO) films with high transparency and relatively low resistivity have been successfully prepared by direct current magnetron sputtering.Stress,micro-structural and optic-electrical properties of TAZO films were studied.The XRD results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis.The stress and the electrical resistivity decrease when the thickness increases from 133 nm to 531 nm.When the thickness is 531 nm,it is obtained that the lowest stress is 0.726 6 GPa and the lowest resistivity is 3.35×10-4 Ω·cm.The stress and electrical resistivity increase when the thickness increases from 531nm to 698 nm.All the films present a high transmittance above 91% in the visible range.The optical band gap of TAZO films is about 3.58 eV.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2011年第3期400-403,共4页 Journal of Optoelectronics·Laser
基金 山东省自然科学基金资助项目(ZR2009GL015)
关键词 应力 Ti-Al共掺ZnO(TAZO)薄膜 透明导电薄膜 磁控溅射 stress Ti-Al co-doped ZnO(TAZO) film transparent conducting film magnetron sputtering
  • 相关文献

参考文献13

二级参考文献34

  • 1余旭浒,马瑾,计峰,王玉恒,张锡健,程传福,马洪磊.薄膜厚度对ZnO∶Ga透明导电膜性能的影响[J].功能材料,2005,36(2):241-243. 被引量:37
  • 2孟志国,彭华君,吴春亚,李娟,熊绍珍,丘成峰,李娟娟,王文,郭海成.彩色膜上ITO的室温沉积及其在FPD中的应用[J].光电子.激光,2005,16(2):140-145. 被引量:16
  • 3吕茂水,庞智勇,修显武,戴瑛,韩圣浩.Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J].Chinese Physics B,2007,16(2):548-552. 被引量:17
  • 4陈新亮,薛俊明,张德坤,孙建,任慧志,赵颖,耿新华.衬底温度对MOCVD法沉积ZnO透明导电薄膜的影响[J].物理学报,2007,56(3):1563-1567. 被引量:15
  • 5Coutal C, Azama A, Roustan J C. Fabrication and characterization of ITO thin films deposited by excimer laser evaporation [J]. Thin Solid Films, 1996,28(1-2) :248 - 253
  • 6Qadri S B, Kim H, Khan H R, et al. Transparent conducting films of In2O3 - ZrO2, SnO2 - ZrO2 and ZnO - ZrO2 [ J ]. Thin Solid Films,2000,377-378:750 - 754
  • 7Kim H, Horwitz J S, Kim W H, et al. Doped ZnO thin films as anode materials for organic hght-emitting diodes[ J]. Thin Solid Films,2002,420-421:539 - 543
  • 8Paul G K, Bandyopadhyay S B, Sen S K, et al. Structural, optical and electrical studies on sol-gel deposited Zr doped ZnO films [ J]. Materials Chemistry and Physics, 2003,79( 1 ) : 71 - 75
  • 9Lv M S, Xiu X W, Pang Z Y, et al. Structural, electrical and optical properties of zirconitun-doped zinc oxide films pre- pared by radio frequency magnetron sputtering[J]. Thin Solid Films,2008,516(8) :2017 - 2021
  • 10Lv M S, Xiu X W, Pang Z Y, et al. Transparent conducting zirconium-doped zinc oxide films prepared by rf magnetron sputtering[ J]. Applied Surface Science, 2005,252 (5) : 5687 - 5692

共引文献57

同被引文献55

  • 1LEE Chongmu,YIM Keunbin,CHO Youngjoon,Lee J.G..A comparison of transmittance properties between ZnO∶Al films for transparent conductors for solar cells deposited by sputtering of AZO and cosputtering of AZO/ZnO[J].Rare Metals,2006,25(z1):105-109. 被引量:8
  • 2吕茂水,庞智勇,修显武,戴瑛,韩圣浩.Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J].Chinese Physics B,2007,16(2):548-552. 被引量:17
  • 3Kim H,Horwitz J S,Kim W H,et al. Doped ZnO thin films as anode materials for organic light-emitting diodes[J].Thin solid films, 2002,420-421:539-543.
  • 4Lv M S,Xiu X W,Pang Z Y,et al. Influence of the deposi- tion pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magne- tron sputtering[J]. Applied Surface Science, 2006,252 (16) :5687-5692.
  • 5Zhang H F,Lei C X,Liu H F,et al. Low-temperature depo- sition of transparent conducting ZnO..Zr films on PET sub- strates by DO magnetron sputtering[J]. Applied Surface Science, 2009,255 (11) : 6054-6056.
  • 6Zhang H F,Liu H F,Feng L. Influence of annealing temper- ature on the properties of ZnO:Zr films deposited by di- rect current magnetron sputtering[J]. Vacuum, 2010,84 (6) :833-836.
  • 7Paul G K, Bandyopadhyay S B, Sen S K,et al. Structural, optical and electrical studies on sol-gel deposited Zr doped ZnO films[J].Materials Chemistry and Physics, 2003,79(1) : 71-75.
  • 8Yang W F, Liu Z G, Peng D L,et al. Room-temperature deposition of transparent conducting AI-doped ZnO films by RF rnagnetron sputtering method[J].Applied Surface Science, 2009 ,255(11) :5669-5673.
  • 9Liu H F, Lei C X. Low-temperature deposited titanium- doped zinc oxide thin films on the flexible PET substrate by DC magnetron sputtering [J]. Vacuum, 2011,86 (4) : 483-486.
  • 10Zhang H F,Liu R J,Liu H F,et al. Mn-doped ZnO trans- parent conducting films deposited by DO magnetron sput- tering[J]. Materials Letters,2010,64(5) : 605-607.

引证文献4

二级引证文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部