摘要
采用直流磁控溅射法在室温条件下制备出Al，压共掺杂ZnO透明导电薄膜。用XRD和SEM分析和观察了薄膜的组织结构和表面形貌，着重分析了靶基距对薄膜结构和光电性能的影响。研究结果表明，制备的灿，乙共掺杂ZnO透明导电薄膜为具有C轴择优取向、六角纤锌矿结构的多晶薄膜。靶基距对Al，Zr共掺杂ZnO透明导电薄膜的结构和电阻率影响显著。薄膜的厚度随靶基距的增加而变薄，在靶基距为60mm时，制备的薄膜厚度为790nm，电阻率具有最小值1．05×10^-3Ω·cm，在可见光区（500—800nm）平均透过率超过92％，在硅基薄膜太阳电池中具有良好的应用前景。
Transparent conducting Al, Zr co-doped ZnO thin film were successfully prepared by DC magnetron sputtering at room temperature. XRD and SEM were used to analyze and observation the structure and surface morphology of the film. The effects of target-substrate distance on structure and optoelectronic properties of film were analyzed intersively. The experimental results show that all the films are polycrystalline with a hexagonal structure and a preferred orientation along the C-axis. The target-substrate distance has a significant influence on the structure and electrical resistivity of Al, Zr co-doped ZnO transparent conductive thin film. The films thickness increase as the increase of the target-substmte distance, the lowest resistivity achieved is 1.05×10^-3Ω·cm at the the target-substrate distance of 60ram. The film present a high transmittance of above 92% in the visible range（500-800nm）, which have the potential application foreground for silicon based thin film solar cells.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2011年第4期476-480,共5页
Acta Energiae Solaris Sinica
基金
山东理工大学'功能材料'创新研究团队资助项目(CX0602)
