摘要
为了提高Zr-Si-C涂层与基体的结合强度,基于粉末埋入反应辅助涂覆工艺,采用新型化学气相反应法在SiC陶瓷表面制备Zr-Si-C涂层。SiC陶瓷基片被包埋于Zr-1%(质量分数)I_2混合粉体中,在850～1100℃进行化学气相反应。碘促进Zr原子向SiC陶瓷表面的传输,Zr与SiC之间的扩散反应导致在SiC表面生成连续的Zr-Si-C复合涂层。采用X射线衍射、扫描电镜结合X射线能谱分析以及相图分析确定了涂层微结构及相组成。结果表明:复合涂层内层为ZrC、中间层为Zr_2Si-ZrC_(1-x)复相区、外层为ZrC_(1-x)。通过测量涂层厚度研究了涂层的生长动力学.在850～1100℃范围内,涂层生长符合抛物线规律,活化能为(210±20)kJ/mol。
In order to improve the adhesion strength of Zr-Si-C coating, Zr-Si-C coating was prepared on SiC ceramic using a new chemical vapor reaction method, and based on a powder immersion reaction assisted coating process. The SiC ceramic was buried in Zr-1% （in mass） 12 blended powders, and reacted with the blended powders at 850-1 100 ℃. Iodine could accelerate the transfer of Zr atoms onto the SiC substrate, and the reactions between Zr and SiC led to the formation of a uniform Zr-Si-C coating on the surface of the SiC ceramic substrate. By using X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy analysis combined with phase diagram analysis, the microstructure and phase composition of the coating were investigated. The Zr-Si--C coating is composed of a ZrC inner layer, a Zr2Si-ZrC1-x middle layer and a ZrC1-x outer layer. By measuring the coating thickness, the growth kinetics of the coating was studied. Between 850 and 1 100 ℃, the growth of Zr-Si-C coating followed the parabolic principle with activation energy of （210±20） kJ/mol.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2007年第11期1419-1422,1438,共5页
Journal of The Chinese Ceramic Society
基金
Lady Davis基金会资助项目。
关键词
化学气相反应
碳化硅
碳化钴
涂层
碘
粉末埋入反应
chemical vapor reaction
silicon carbide
zirconium carbide
coating, iodine
powder immersion reaction
