摘要
用射频等离子体增强化学气相沉积(RF-PECVD)系统在普通玻璃衬底上制备了氢化非晶硅薄膜(a-Si∶H),用改进的快速光热退火炉(RTP)对薄膜进行了低温下的退火处理。借助于扫描电子显微镜(SEM)对薄膜表面形貌的分析得知:本实验在600℃下成功制备了柱状结构多晶硅薄膜;相对来说,550℃退火60 s的柱晶效果最好;最大柱晶宽度达到了240 nm;结晶次序为从表面到内部。对实验结果进行了解释。
Hydrogenated amorphous silicon （a-Si ： H） thin film was deposited on common glass by radiate frequency plasma enhanced chemical vapor deposition（RF-PECVD）system at low temperature,and subsequently annealed by a improved rapid thermal process （RTP） furnace. Through scanning electronic microscopy （SEM） measurement, the morphologies of silicon thin film were investigated. The results show that, silicon thin film with columnar grains has been successfully fabricated below 600 ℃ while the best structure is obtained at annealing temperature of 550 ℃ for 60 s in this experiment. And the diameter of the largest column is about 240 nm. The crystallization order of the sample is from surface to inner.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2007年第4期531-533,共3页
Semiconductor Optoelectronics
基金
国家"973"计划资助项目(2006202601)
关键词
硅薄膜
柱状结晶
快速热退火
扫描电子显微镜
silicon thin film
columnar grain
rapid thermal process （RTP）
scanning electronic microscopy csing
