摘要
对a-Si:H及μC-Si:H膜的Raman散射谱的观测中,出现了类TA 模强度高于类TO模的情况.在非晶硅薄膜晶化过程中,类TA模同样呈现出规则性的变化,并可同C-Si一级声子谱的TA模精细结构对应起来.说明通过分析类TA模精细结构的变化,同样可用来分析研究a-Si:H膜中结构变化及其晶化过程的规律.
From the observation of Raman scattering for a-Si:H and μc-Si:H films, there appearsthat the intensity of TA-like mode is higher than TO-like mode.During the crystallizationprocess of a-Si:H films, the TA-like mode also reveals a regular variation and could torres-pond to the fine structure of the first order phonon spectrum of TA mode in c-Si Raman spec-trum. It demonstrats that the variation of fine structure of TA-like mode may also be used toanalyse the structure features and regularity of the crystallization process of a-Si:H films.
基金
国家自然科学基金
