摘要
研究了镶嵌在ＳｉＯ２介质中的不同尺寸（４—１６ｎｍ）纳米Ｇｅ颗粒的Ｒａｍａｎ散射谱特征，与大块标准Ｇｅ晶体的散射峰相比，观察到了理论预期的纳米半导体粒子的Ｒａｍａｎ散射峰的宽化和红移现象．采用声子限域模型较好地解释了实验结果．探讨了ＳｉＯ２介质基体作用于镶嵌Ｇｅ粒子的压应力以及纳米Ｇｅ粒子的表面界面效应对Ｒａｍａｎ散射光谱的峰形。
Raman scattering of Ge nanocrystallites from 4 to 16nm in size, embedded in SiO 2 thin films has been studied.The Ge SiO 2 samples were prepared by ion beam sputtering and a post annealing technique. A red shift and broadening of the Raman peak observed with decreasing the size of Ge particles are in good agreement with the calculated results based on the phonon confinement theory. Effects of the surface and interface of the Ge nanocrystallites on Raman spectra have also been investigated.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第10期1756-1761,共6页
Acta Physica Sinica
