摘要
利用等离子体增强(PECVD)法和快速热处理(RTP)法分别在玻璃衬底上制备了硅薄膜。用光谱测试仪器,对2种方法制备的硅薄膜进行了研究。结果显示,各种制备参数对增大薄膜晶粒尺寸存在一个最佳点;总的来说,RTP法制备的晶粒尺寸大于PECVD中制备的晶粒尺寸。
Silicon thin films were fabricated respectively by PECVD and by RTP. The grain sizes of the resulting silicon thin films were studied by using XRD and Raman measurement. The results showed that there is a best value for various factors to enlarging grain size of silicon thin film. In general, the grains size fabricated in RTP is larger than that in PECVD.
出处
《可再生能源》
CAS
2006年第6期10-12,共3页
Renewable Energy Resources
基金
国家重点基础研究973计划(编号:2006CB202601)。
关键词
硅薄膜
晶粒尺寸
再结晶
silicon thin films
grain size
recrystallization
