摘要
对锗和锗化硅材料应用及发展前景进行了简单介绍。主要论述了在14 nm技术节点以下应用于pMOS晶体管沟道材料的锗的化学机械抛光(CMP)技术的发展现状,如抛光液组分的优化以及工艺参数的革新,经过CMP后,Ge的表面粗糙度可以有效降低到0.175 nm(10μm×10μm)。此外对在最新技术节点应用于CMOS以及缓冲层的SiGe材料的CMP技术发展现状进行了总结分析,通过浅沟道隔离技术以及使用优化后的抛光液对Si_(0.5)Ge_(0.5)沟道材料进行化学机械抛光处理后的表面粗糙度为0.09 nm(1μm×1μm)。最后,对目前国内外Ge和SiGe的CMP技术发展现状进行了总结,指出当前CMP技术存在的问题并对其未来发展方向进行了展望。
The application and development prospect of Ge and SiGe are simply introduced.The development status of the chemical mechanical polishing（CMP）technology of Ge for the pMOS transistor channel material under 14 nm technology node is mainly discussed,such as the optimization of slurry components and innovation of process parameters.And the surface roughness of the Ge reduces effectively to 0.175 nm（10μm×10μm）through the CMP.In addition,the CMP technology development status of SiGe applied in CMOS and buffer layer for the newest technology nodes are summarized and analyzed,and the surface roughness of the Si0.5Ge0.5channel materials is 0.09 nm（1μm×1μm）after the CMP with the shallow trench insulation technique and the optimized slurry.Finally,the CMP technology developments of Ge and SiGe are summarized,the existing problems in the current CMP technology are pointed out,and its future development direction is prospected.
出处
《微纳电子技术》
北大核心
2016年第9期623-629,共7页
Micronanoelectronic Technology
基金
河北省高层次人才资助项目百人计划项目(E2013100006)
