摘要
研究了不同能量、剂量As^+、Si^+双注入于SI GaAs中,As^+注入对注Ss^+有源层的影响.首次给出了双注入样品瞬态退火后有源层的激活率和载流子迁移率,退火前后材料的沟道谱.实验表明,As^+、Si^+双注入样品比Si^+单注入样品在较低退火温度下就能激活Si^+,在适当高温下能得到性能良好的有源层.
The effects of As^+ implantation on Si^+-implanted SIGaAs have been investigated by usingAs^+ and Si^+ dual implantation and transient annealing.The results for Si implant activationefficiency,carrier mobility and channeling spectrum of dually implanted samples are given,indicating that it is easier to activate the Si implants at low temperature in As^+ and Si^+ duallyimplanted samples than in Si^+ singly implanted ones.And better properties of dually implant-ed samples can be obtained after annealing at a definite high temperature.
关键词
砷离子
硅离子
双注入
瞬态退火
As^+ and Si^+ dual implantation
SI GaAs
Transient annealing
Activation efficiency
Mobility
