摘要
研究了硅离子注入LEC生长的SI-Ga'As材料时BF^+对离子注入层特性的影响。认为BF^+的影响主要反应在B的影响,由于B的掺入使B替Ga位从而促使大量Si去替As位,形成B_(Ga)-Si_(As)和Si_(As)受主,从而减少了Si_(Ga)的施主浓度并且补偿了n型载流子浓度。因此B的掺入减小了注入层的电激活率。又因为B的掺入产生了一些空位和间隙原子等点缺陷,从而使注入层迁移率下降。实验说明避免BF^+对离子注入层的影响是提高注入层质量的重要关键。
The BF^+ effect on Si^+ -implanted GaAs is investigated. Doped boron occupies gallium sites as impurity defect B_(G)a. The implanted silicon occupying Ga Sublattice sites behaves as the shallow donor Si_(Ga) and that being held on As sublattice sites by boron behaves as the shallow acceptor complex B_(Ga) Si_(as) or Si_(As). Therefore, Si_(Ga) is decreased and compensated. Some point defects are produced by boron. The electrical activation and mobility of Si^+ implanted layers is reduced. The experiment proved that BF^+ effect is important in ^(29)Si^+ inplanted GaAs layers.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
1992年第4期478-482,共5页
Journal of Beijing Normal University(Natural Science)
基金
国家自然科学基金
关键词
砷化镓
离子注入
硅离子
Si^+ implantation
SI-GaAs
BF^+ effect
