摘要
对 MBE-GaAs/Si 进行离子注入和退火.GaAs 外延层的厚度为0.9-2.0μm.Si离子的注入能量及剂量分别为1.2-2.8MeV,l×10^(14)-7×10^(15).cm^(-2).退火采用红外瞬态退火(850℃,15s)及白光退火(1050℃,8s).背散射沟道分析采用4.2MeV^7Li.实验表明,注入结合退火是改善 GaAs 外延层晶体质量的一种有效方法.注入剂量过大,由于正化学配比遭到破坏,外延生长终止.
MBE-GaAs films with thickness 0.9-2.0μm on Si were implanted with Si ions at 1.2-2.8MeV.The implantation dose were 1×10^(14)-7×10^(15)cm^(-2).Both infrarad transient annealing (850℃,15s) and white liqht annealing (1050℃.8s) were used. Backscattering of Li ions at 4.2 MeV and channeling analysis were used to investigate the crystalline quality of GaAs films.It has been demonstrated that implantation followed by annealing is an efficient way to improve the quality of epitaxial GaAs,and that doses higher than a certain value leads to the local nonstoichinometry which inhibits regrowth.
出处
《汕头大学学报（自然科学版）》
1991年第1期27-31,共5页
Journal of Shantou University：Natural Science Edition
