摘要
本文对硅中砷扩散系数考虑了中性空位引起的本征扩散项D^0的影响,推导而得出D^0对表面浓度N_s,结深x_j(t)等的影响大约为5-10％。在离子注入退火的解析模型中考虑其影响是有实际意义的。
The influence of the intrinsic diffusion D_i^0 caused by neutral vacancy on arsenic diffusioncoefficient is considered.It causes about 5-10% correction to the surface concentration N_s, junctiondepth X_j(t), etc. It is meaningful to include tie influence of D_i^0 in the analytical modelfor ion implantation annealing.
关键词
离子注入
硅
砷离子
退火
本征扩散
Ion implantation
Annealing
Intrinsic diffusion Analytical model
