摘要
本文研究了Si注入GaAs的快速退火(RTA)特性。得出930—950℃退火5s为最佳退火条件。测量结果表明,当注入剂量大于10^(13)cm^(-2)时,电子浓度呈饱和现象。为提高电子浓度本文提出Si,As双注入GaAs的方法,研究了(60—80)keV,(5—10)×10^(14)Si/cm^2+(150—180)keV,(5—30)×10^(14)As/cm^2注入并经RTA后的电特性。结果表明,双注入后样品中电子浓度有明显提高,对80keV,10^(15)Si/cm^2+150keV,3×10^(15)As/cm^2来说,电子浓度大于10^(19)cm^(-3)。TEM观察表明,双注入样品的剩余缺陷密度大大低于单注入的情况。本文并对双注入补偿机理进行了讨论。
Rapid themal annealing (RTA) of Si-implantation into GaAs is studied.The optimalcondition is annealing at temperatures ranging from 930℃ to 960℃ for 5s in dry N_2. Electron concentration of the Si, As dual-implantation GaAs is increased considerably. Themaximum concentration of 3×10^(19)cm^(-3) was obtained in specimens implanted with 80keV Siand 150 keV As. The implantation doses for Si and AS were 1×10^(15)cm^(-2)and 3×10^(15)cm^(-2), respectively.TEM reveals that the removal of lattice damage of Si, As dual-implantation isbetter than that of single Si-implantation.
