摘要
本文对金属—n型Ⅲ-Ⅴ族化合物半导体欧姆接触的接触电阻进行了理论分析,研究了AuGeNi/n-InP欧姆接触的电学特性、冶金性质和组分分布,其最佳工艺条件已用于器件制造.
In this paper, the contact resistance of a metal-n type III-V compound semiconductor ohmic contact is theoretically analysed. The electrical characteristics, metallurgical properties and component percentage of AuGeNi/n-InP ohmic contact are studied. The optimal parameters have been used to fabricate some devices.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第4期386-391,共6页
Research & Progress of SSE
