摘要
本文首先给出了180kcV的N_2^+注入Si的X射线衍射(XRD)分布,然后用Levenberg-Marquardt最优化方法模拟实验曲线。根据XRD运动学理论,在我们给出的试探胁变函数和多层模型的基础上,用自编程序计算给出了晶格胁变随注入深度、剂量和退火温度的变化。最后我们对实验和计算结果进行了初步的分析讨论。
The distributions of X-ray diffraction (XRD) of N2+ (180 keV) implanted Si are presented. On the basis of trial and error strain function and multilayer model, according to kinematic theory of XRD, with Levenberg-Marqardt optimization method to simulate experimental curve we computed the strain distribution as the functions of depth, dose and annealing temperature. The results are analysed and discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1989年第4期579-585,共7页
Acta Physica Sinica
