摘要
本文用X射线衍射(XRD)的运动学理论和扩展电阻(SR)研究了N^+和N_2^+注入Si的力学和电学性质,给出了不同剂量的晶格应变随注入深度的分布以及在注入层中产生的点缺陷数量。用SR给出了不同剂量N^+和N_2^+注入Si的电阻率随深度的变化。二者比较,我们实验的各种剂量(1×10^(16)cm^(-2)除外)的电阻率大致相等,而产生的应变,后者是前者的1.3倍左右。
The mechanical and electrical properties of N^+ and N_2^+ implanted Si are investigated bymeans of the kinematic theory of X-ray diffraction and the measurment of spreading resistanceThe strain distributions in the layers implanted with different doses as a function of the depthare given. The number of point defects in the implanted layers as a function of depth is alsogiven.The resistivities of N^+ and N_2^+ implanted Si are investigated by spreading resistancemethod. It was found that the resistivities of the N^+ and N_2^+ implanted Si with different dosesexcept the dose of 1×10^(16)cm~ are approximately identical,and the strain created by N_2^+ implantedis 1.3 times as much as that of N^+ implanted.
关键词
离子注入
N
SI
X射线衍射
晶格应变
Ion implantation
X-ray diffraction
Spreading resistance
Lattice strain
