摘要
从体硅CMOS器件的闭锁效应入手,提出了抑制闭锁的一种新方法—伪闭锁路径法。详细探讨了伪闭锁路径的设计方法后,还提供了一个设计实例,给出了计算机仿真结果和实验验证结果。伪闭锁路径法能够较好抑制体硅CMOS器件的永久闭锁问题,但不能避免辐射引起的剂量率扰动。
An innovation for prevention latchup, pseudo-latehup path method, has been put forward that is based on latehup effects of bulk-Si CMOS devices. After the design of pseudo-latehup path method is studied in detail, a practice and the corresponding simulation and experiment validation result are given in this text. Pseudo-latehup path method can be used to prevent permanent latehup, but not to eliminate the dose rate upset in bulk-Si CMOS devices. An innovation for prevention latchup, pseudo-latehup path method, has been put forward that is based on latehup effects of bulk-Si CMOS devices. After the design of pseudo-latehup path method is studied in detail, a practice and the corresponding simulation and experiment validation result are given in this text. Pseudo-latehup path method can be used to prevent permanent latehup, but not to eliminate the dose rate upset in bulk-Si CMOS devices.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2006年第4期446-449,共4页
Nuclear Electronics & Detection Technology
