摘要
对 L C54HC0 4 RH电路在不同辐射剂量率进行了电离辐射实验。分析了该电路的阈值电压随辐射剂量率的变化关系。实验结果表明 :在辐射剂量率处于 3× 10 -4 Gy(Si) / s到 1.98×10 -1Gy(Si) / s范围内 ,辐射感生界面陷阱电荷随辐射剂量率的减少而增加。辐射感生界面陷阱电荷是导致该电路在空间辐射环境下失效的主要原因。
The experiment of ionization radiation effect on LC54HC04RH was performed. The threshold voltage's shift versus the dose rate was analyzed on this device. The experimental results show that the number of interface traps charge at given total dose rate decreased at dose rates from 1.98×10 -1 Gy(Si)/s to 3×10 -4 Gy(Si)/s; the interface traps charge induced by the irradiation were the main reason which induced this device failure at space environments.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2000年第4期439-443,共5页
Research & Progress of SSE
