摘要
本文研究了氢原子与Ｓｉ中４ｄ过渡杂质（Ｐｄ、Ｒｈ、Ｒｕ、Ｍｏ）引入深中心的相互作用，得到了Ｓｉ中这些深中心被钝化的难易程度．从钝化角度支持了Ｓｉ：Ｐｄ与Ｓｉ：Ｒｈ中有关能级属于同一中心、不同荷电态的判断，同时提出了Ｓｉ：Ｍｏ中Ｅ（０．５３）和Ｈ（０．１６）两个能级属于同一中心、不同荷电态的证据，通过氢对已知同一中心、不同荷电态两个能级的相互作用，对氢的钝化机理作了初步探讨．
The interaction between hydrogen and centers in silicon introduced by 4d trasition impurities was investigated ,and the order of sensitivity of these deep centers to hydrogen passivation was obtained. From the point of view of hydrogen passivation ,we have got evidences to support the identical center suggestion for the levels related in p-Si: Pd and n-Si : Rh ,and we suggest that E(0.53)and H(0. 36) in Si : Mo have this kind of property. The mechanism of hydrogen passivation is also discussed through the charge states of atomic hydrogen in silicon.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1994年第5期80-83,共4页
Acta Electronica Sinica
关键词
硅
杂质
氢
钝化
Silicon
Hydrogen passivation
4d Tran-sition impurity
Deep level transient spectroscopy
