摘要
首次用单轴应力下的深能级瞬态谱法研究了N型直拉硅中与铜有关的主要深能级E_c-0.18eV.由实验结果推断,这个能级对应于硅中两个不同的铜中心,其深能级的激活能十分接近,单轴应力使偶然简并解除从而将它们分开.
The main copper-related deep level E_c-0.18eV in n-type silicon has been studied withUniaxially Stressed Deep Level Transient Spectroscopy for the first time. Judging from the ex-perimental results, this level corresponds to two different copper centers with their activationenergies very close to one another.These two centers can be distinguished from one anotherby removing the accidental degeneracy with uniaxial stress.
基金
国家自然科学基金
关键词
硅
深中心
铜
Silicon
Deep center
Copper
